Iimpawu ezibonakalayo ze-silicon carbide powder zibandakanya ukomelela okuphezulu, ukunganyangeki, ukumelana nokugqwala, ukuhanjiswa kwe-thermal ephezulu, ukugqunywa kombane okugqwesileyo kunye nokusebenza ukothuka okubanzi kwe-thermal.Ezi zakhiwo zenza i-SIC powder ibe yinto efanelekileyo, enokuthi isetyenziswe ngokubanzi kwiindawo ezigqithiseleyo ezifana nobushushu obuphezulu, uxinzelelo oluphezulu, amandla aphezulu kunye nemitha enamandla.I-Silicon carbide powder inoluhlu olubanzi lwezicelo, ngokukodwa kubandakanywa i-ceramics, i-semiconductors, amandla amatsha kunye nezinye iindawo.Kwintsimi yeeseramics, i-silicon carbide powder ingasetyenziselwa ukulungisa izinto eziphezulu ze-ceramic, ezifana nezitya ze-ceramic ezinobushushu obuphezulu, iibheringi ze-ceramic, njl njl. Kwintsimi ye-semiconductor, i-silicon carbide powder ingasetyenziselwa ukulungisa izixhobo ze-semiconductor, ezifana njengama-diode, izixhobo zamandla, njl njl
i-silicon carbide sic powder specication ye-nonabrasive | ||||
Uhlobo | Ulwakhiwo lwekhemikhali esalathayo (%) | Ubungakanani(mm) | ||
SiC | FC | Fe2O3 | ||
TN98 | ≥98.00 | <1.00 | <0.50 | 50~0 |
TN97 | ≥97.00 | <1.50 | <0.80 | 13~0 |
TN95 | ≥95.00 | <2.50 | <1.00 | 10~0 |
TN90 | ≥90.00 | <3.00 | <2.50 | 5~0 |
I-TN88 | ≥88.00 | <3.50 | <3.00 | 0.5~0 |
TN85 | ≥85.00 | <5.00 | <3.50 | 100F |
TN60 | ≥60.00 | <12.00 | <3.50 | 200F |
TN50 | ≥50.00 | <15.00 | <3.50 | 325F |
I-Huarui inenkqubo engqongqo yolawulo lomgangatho.Sivavanya iimveliso zethu kuqala emva kokuba sigqibe imveliso yethu, kwaye siphinda sivavanye phambi kokuhanjiswa kwazo zonke, kunye nesampulu.Kwaye ukuba ufuna, singathanda ukwamkela umntu wesithathu ukuba avavanye.Ewe ukuba uyathanda, singakunika isampuli ukuba uvavanye.
Umgangatho wethu wemveliso uqinisekisiwe yiSichuan Metallurgical Institute kunye neGuangzhou Institute of Metal Research.Intsebenziswano yexesha elide kunye nabo inokonga ixesha elininzi lovavanyo kubathengi.